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SQJ964EP
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
2.0
1.7
I D = 9.7 A
100
10
T J = 150 °C
1.4
1.1
0.8
0.5
V GS = 10 V
1
0.1
0.01
0.001
T J = 25 °C
- 50
- 25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.10
0.08
0.06
0.04
0.02
0
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
T J = 150 °C
T J = 25 °C
75
72
69
66
63
60
V S D - S ource-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
I D = 1 mA
0
2
4
6
8
10
- 50
- 25
0
25
50
75
100
125
150
175
V GS - G ate-to- S ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
T J - Junction Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
1.0
0.5
0
I D = 5 mA
- 0.5
I D = 250 μA
- 1.0
- 1.5
- 50
- 25
0
25
50
75
100
125
150
175
T J - Junction Temperature (°C)
Threshold Voltage
S11-2419-Rev. B, 19-Dec-11
4
Document Number: 65167
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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